Pramiti Hui

Pramiti Hui

Indian Institute of Technology Bombay, India

Resistive Random Access Memory Devices by different Organic– Inorganic Hybrid Perovskites 

Abstract:

Resistive memory devices, and in particular memories based on low-cost, solution-processable and chemically tunable organic materials, are promising alternatives explored by the industry. Such devices made from materials such as CH3NH3PbBr3, CH3NH3PbCl3 and CH3NH3PbI3, exhibit high switching voltage and thereby require higher operational power. This also leads to resistive dissipation in the form of heat, leading to overheating of the devices and adversely affects their reliability. Addressing this demand, we report the organic– inorganic hybrid perovskite materials in Resistive memory devices with a remarkable appearance of switching effect which shows high reproducibility, fast switching, excellent endurance, stability and scalability. Perovskite employed memory devices were fabricated with a simple capacitor configuration (silicon-metal–dielectric) consisting of Si/Au/CH3NH3PbX3 (X = I3, Br3 or Cl3) (MPI, MPB, MPC) hybrid perovskite. The device exhibited remarkable unipolar and stable resistive switching behavior with small on–off voltage of <2 V. In comparison to their inorganic counterparts, one noticeable advantage of organic–inorganic hybrid perovskites lies in their facile and low temperature processability. Here, we compare three different halide hybrid perovskite I/V in different temperature, variable voltage Raman spectra, SEM, PXRD, UV-Visible etc. These device can be used as resistive random access memory (RRAM), based on the resistive switching (RS) effect originated from a sudden resistance change, bistable state, and volatile properties. For device fabrication, first Si wafer was RCA cleaned then 100 nm Au was coated on it by thermal evaporator. The perovskite solution (1M, DMSO solvent) was dispensed onto the Au-Si substrate and spin-coated at 3000 RPM for 30s in air, followed by annealing at 80°C for 10 min. , different voltages and in situ Raman measurements were taken to understand the mechanism behind switching behaviour in resistance of methyl ammonium lead halide perovskite devices. The variation of Raman peak signifying that it undergoes phase transition from orthorhombic to tetragonal to cubic in LRS to HRS.